| PART |
Description |
Maker |
| IRFI9640 IRFI9640G |
Power MOSFET(Vdss=-200V Rds(on)=0.50ohm Id=-6.1A)
Power MOSFET(Vdss=-200V, Rds(on)=0.50ohm, Id=-6.1A)
Power MOSFET(Vdss=-200V/ Rds(on)=0.50ohm/ Id=-6.1A)
-200V Single P-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package
|
IRF[International Rectifier]
|
| IRFB42N20D |
200V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
Power MOSFET(Vdss=200V/ Rds(on)max=0.055ohm/ Id=44A)
|
International Rectifier
|
| IRFD9210 |
-200V Single P-Channel HEXFET Power MOSFET in a HEXDIP package
Power MOSFET(Vdss=-200V, Rds(on)=3.0ohm, Id=-0.40A)
|
International Rectifier
|
| IRC630 IRC |
Power MOSFET(Vdss=200V, Rds(on)=0.40ohm, Id=9.0A)
Power MOSFET(Vdss=200V/ Rds(on)=0.40ohm/ Id=9.0A)
200V Single N-Channel HEXFET Power MOSFET in a TO-220 5-Pin (HEXSense) package
|
IRF[International Rectifier]
|
| IRF9640 IRF9640PBF |
-200V Single P-Channel HEXFET Power MOSFET in a TO-220AB package
Power MOSFET(Vdss=-200V Rds(on)=0.50ohm Id=-11A)
Power MOSFET(Vdss=-200V, Rds(on)=0.50ohm, Id=-11A)
Power MOSFET(Vdss=-200V/ Rds(on)=0.50ohm/ Id=-11A)
|
IRF[International Rectifier]
|
| IRFB31N20D IRFS31N20DTRL |
Power MOSFET(Vdss=200V/ Rds(on)max=0.082ohm/ Id=31A)
TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 31A I(D) | TO-263AB 晶体管| MOSFET的| N沟道| 200伏五（巴西）直|1A条（丁）|63AB
Power MOSFET(Vdss=200V, Rds(on)max=0.082ohm, Id=31A) 功率MOSFET（减振钢板基本\u003d 200V的电压，的Rds（on）最大值\u003d 0.082ohm，身份证\u003d 31A条）
|
International Rectifier, Corp.
|
| IRFP240 IRFP250NPBF IRFP240PBF |
Power MOSFET(Vdss=200V, Rds(on)=0.18ohm, Id=20A) 功率MOSFET（减振钢板基本\u003d 200V的电压，的Rdson）\u003d 0.18ohm，身份证\u003d 20A条）
HEXFET? Power MOSFET
200V Single N-Channel HEXFET Power MOSFET in a TO-247AC package
|
International Rectifier, Corp.
IRF[International Rectifier]
|
| FSL9230D FSL9230D1 FSL9230D3 FSL9230R FSL9230R1 FS |
3A, -200V, 1.50 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs 3A 200V的电压，1.50欧姆，拉德硬，SEGR性，P通道功率MOSFET
3A, -200V, 1.50 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs 3 A, 200 V, 1.5 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-205AF
From old datasheet system
3A/ -200V/ 1.50 Ohm/ Rad Hard/ SEGR Resistant/ P-Channel Power MOSFETs
|
Intersil, Corp.
INTERSIL[Intersil Corporation]
|
| IRF630N IRF630NL IRF630NS |
Power MOSFET(Vdss=200V, Rds(on)=0.30ohm, Id=9.3A) 功率MOSFET（减振钢板基本\u003d 200V的电压，的Rds（on）\u003d 0.30ohm，身份证\u003d 9.3A
Power MOSFET(Vdss=200V/ Rds(on)=0.30ohm/ Id=9.3A)
Power MOSFET(Vdss=200V Rds(on)=0.30ohm Id=9.3A)
|
International Rectifier, Corp.
IRF[International Rectifier]
|
| IRHE9230 IRHE93230 2048 |
200V, P-Channel Surface Mount Radiation Hardened Power MOSFET(200V,P沟道表贴型抗辐射功率MOS场效应管) 00V，P通道表面安装抗辐射功率MOSFET00V的电压，P沟道表贴型抗辐射功率马鞍山场效应管）
From old datasheet system
RADIATION HARDENED POWER MOSFET SURFACE MOUNT (LCC-18)
|
International Rectifier, Corp.
|
| IRF630NS IRF630NL IRF630N |
N-Channel Power MOSFETs 200V, 9.3A, 0.30-Ohm
N-Channel Power MOSFETs 200V, 9.3A, 0.30з
|
FAIRCHILD[Fairchild Semiconductor]
|
